The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Aug. 12, 2014
Micron Technology, Inc., Boise, ID (US);
Adam L. Olson, Boise, ID (US);
Kaveri Jain, Boise, ID (US);
Lijing Gou, Boise, ID (US);
William R. Brown, Boise, ID (US);
Ho Seop Eom, Boise, ID (US);
Xue Chen, Boise, ID (US);
Anton J. deVilliers, Clifton Park, NY (US);
MICRON TECHNOLOGY, INC., Boise, ID (US);
Abstract
Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.