The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jul. 07, 2014
Jae-hwa Park, Yongin-si, KR;
Kwang-jin Moon, Hwaseong-si, KR;
Byung-lyul Park, Seoul, KR;
Suk-chul Bang, Yongin-si, KR;
Jae-hwa Park, Yongin-si, KR;
Kwang-jin Moon, Hwaseong-si, KR;
Byung-lyul Park, Seoul, KR;
Suk-chul Bang, Yongin-si, KR;
Abstract
Provided is an integrated circuit device including a through-silicon-via (TSV) structure and a method of manufacturing the integrated circuit device. The integrated circuit device includes a semiconductor structure including a substrate and an interlayer insulating film, a TSV structure passing through the substrate and the interlayer insulating film, a via insulating film substantially surrounding the TSV structure, and an insulating spacer disposed between the interlayer insulating film and the via insulating film.