The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Sep. 21, 2011
Applicants:

Shumpei Tanaka, Ibaraki, JP;

Takeshi Matsumura, Ibaraki, JP;

Inventors:

Shumpei Tanaka, Ibaraki, JP;

Takeshi Matsumura, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/6836 (2013.01); H01L 24/27 (2013.01); H01L 23/3121 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68336 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/85207 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/3025 (2013.01); Y10T 428/24331 (2015.01);
Abstract

The present invention provides a dicing die bond film in which yielding and breaking of the dicing film are prevented and in which the die bond film can be suitably broken with a tensile force. In the dicing die bond film of the present invention, the tensile strength of the contact part in which the outer circumference of the push-up jig contacts the dicing film at 25° C. is 15 N or more and 80 N or less and the yield point elongation is 80% or more, the tensile strength of the wafer bonding part of the dicing film at 25° C. is 10 N or more and 70 N or less and the yield point elongation is 30% or more, [(the tensile strength of the contact part)−(the tensile strength of the wafer bonding part)] is 0 N or more and 60 N or less, and the breaking elongation rate of the die bond film at 25° C. is more than 40% and 500% or less.


Find Patent Forward Citations

Loading…