The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Nov. 04, 2013
Globalfoundries Inc., Grand Cayman, KY;
Hung-Wei Liu, Saratoga Springs, NY (US);
Zhiguo Sun, Halfmoon, NY (US);
Huang Liu, Mechanicville, NY (US);
Jin Ping Liu, Ballston Lake, NY (US);
GLOBALFOUNDRIES INC, Grand Cayman, KY;
Abstract
Methods of facilitating fabrication of defect-free semiconductor structures are provided which include, for instance: providing a dielectric layer, the dielectric layer comprising at least one consumable material; selectively removing a portion of the dielectric layer, wherein the selectively removing consumes, in part, a remaining portion of the at least one consumable material, leaving, within the remaining portion of the dielectric layer, a depleted region; and subjecting the depleted region of the dielectric layer to a treatment process, to restore the depleted region with at least one replacement consumable material, thereby facilitating fabrication of a defect-free semiconductor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile