The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Mar. 15, 2013
Applicant:

Nissin Ion Equipment Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Sami K Hahto, Nashua, NH (US);

Nariaki Hamamoto, Kyoto, JP;

Tetsuya Igo, Kyoto, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01J 37/3007 (2013.01); H01J 2237/047 (2013.01); H01J 2237/10 (2013.01); H01J 2237/24542 (2013.01); H01J 2237/30472 (2013.01);
Abstract

In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.


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