The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Nov. 13, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Hiroshi Kanno, Mie-ken, JP;
Yoichi Minemura, Mie-ken, JP;
Takayuki Tsukamoto, Mie-ken, JP;
Takamasa Okawa, Mie-ken, JP;
Atsushi Yoshida, Mie-ken, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a nonvolatile memory device includes: a memory cell array including first wirings, second wirings, and a memory cell connected between the first wirings and the second wirings; and a control circuit unit configured to select a selected memory cell from the memory cells, perform a first operation of changing a resistance state of the selected memory cell between a first resistance state and a second resistance state, and determine whether the first operation has been properly performed or not and perform retry operation such as applying a retry pulse when the first operation has not been properly performed. The control circuit unit regards the selected memory cell as excessive retry operation and inhibits the selected memory cell in accordance with the number of times of the excessive retry operation when the number of times of the retry operation is over k times.