The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Oct. 31, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method includes providing a first layout of a semiconductor device comprising a plurality of cells representing circuit elements, and providing a cell library comprising a plurality of cells in a processor. The circuit elements comprise a plurality of fin field effect transistors (Fin-FETs). Each of the plurality of cells in the cell library is displayed with a respectively different marker indicating a respective fin height. The method further includes generating a second layout for the semiconductor device to be fabricated, by placing or replacing at least one cell from the cell library in a respective location in the first layout. The at least one cell from the cell library comprises a Fin-FET with a respective fin height different from an adjacent Fin-FET in the second layout.