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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9140978 B1

PDFFull Text
Date of Patent:
Sep. 22, 2015

Filed:

Sep. 08, 2011

Semiconductor multi-project or multi-product wafer process

Applicant:

Weng-dah Ken, Hsinchu, TW;

Inventor:

Weng-Dah Ken, Hsinchu, TW;

Assignee:

Other;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Angel Roman

Int. Cl.
CPC ...
H01L 21/50 (2006.01); G03F 1/50 (2012.01); H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01); G03F 7/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/50 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); G03F 7/0035 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 25/50 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/13091 (2013.01);
Abstract

The embodiment provides a semiconductor MP wafer process including processing a plurality of MP wafers in a lot or batch with a first process step. The plurality of the MP wafers is split into an MP wafer group-and an MP wafer group-. At least one of the MP wafers of the MP wafer group-is processed with a second process step-and at least one of the MP wafers of the MP wafer group-is processed with a second process step-to form different device components on the MP wafers of the MP wafer group-and group-, respectively. At least one of the MP wafers of the MP wafer group-is processed with a third process step-and at least one of the MP wafers of the MP wafer group-is processed with a third process step-to form a substantially same device component on the MP wafers.

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