The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Jul. 30, 2014
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Pei-Ling Tseng, Miaoli County, TW;

Keng-Li Su, Hsinchu County, TW;

Chih-Sheng Lin, Tainan, TW;

Shyh-Shyuan Sheu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H03K 19/003 (2006.01); G01R 31/28 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H03K 19/003 (2013.01); G01R 31/28 (2013.01); H03K 19/0008 (2013.01); H01L 22/22 (2013.01); H01L 2225/06541 (2013.01);
Abstract

TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.


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