The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Aug. 24, 2014
Applicant:

Bandgap Engineering, Inc., Salem, NH (US);

Inventors:

Faris Modawar, Orem, UT (US);

Marcie R. Black, Lincoln, MA (US);

Brian Murphy, Revere, MA (US);

Jeff Miller, Brookline, MA (US);

Mike Jura, Santa Monica, CA (US);

Assignee:

Advanced Silicon Group, Inc., Lincoln, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/0288 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035227 (2013.01); H01L 31/028 (2013.01); H01L 31/0288 (2013.01); H01L 31/1804 (2013.01); Y10S 977/762 (2013.01);
Abstract

Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.


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