The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 05, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Mei-Chun Chen, Zhudong Township, TW;
Ching-Chen Hao, Zhubei, TW;
Wen-Hsin Chan, Zhubei, TW;
Chao-Jui Wang, Zhudong Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a first doped region and a second doped region, and a gate stack formed on the semiconductor substrate. The semiconductor device also includes a main spacer layer formed on a sidewall of the gate stack. The semiconductor device further includes a protection layer formed between the main spacer layer and the semiconductor substrate, and the protection layer is doped with a quadrivalent element. In addition, the semiconductor device includes an insulating layer formed on the semiconductor substrate and the gate stack, and a contact formed in the insulating layer. The contact has a first portion contacting the first doped region and has a second portion contacting the second doped region. The first region extends deeper into the semiconductor substrate than the second portion.