The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

May. 28, 2013
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Pei-Ling Tseng, Miaoli County, TW;

Keng-Li Su, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/003 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.


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