The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Aug. 05, 2005
Arjun Kar-roy, Irvine, CA (US);
Marco Racanelli, Santa Ana, CA (US);
Jinshu Zhang, Irvine, CA (US);
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
A disclosed method for fabricating a structure in a semiconductor die comprises steps of implanting a deep N well in a substrate, depositing an epitaxial layer over the substrate, and forming a P well and a lateral isolation N well over the deep N well, wherein the lateral isolation N well and the P well are fabricated in the substrate and the epitaxial layer, and wherein the lateral isolation N well laterally surrounds the P well, and wherein the deep N well and the lateral isolation N well electrically isolate the P well. Implanting a deep N well can comprise steps of depositing a screen oxide layer over the substrate, forming a mask over the screen oxide layer, implanting the deep N well in the substrate, removing the mask, and removing the screen oxide layer. Depositing the epitaxial layer can comprise depositing a single crystal silicon over the substrate.