The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Sep. 12, 2013
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/3088 (2013.01);
Abstract
A patterning method is provided. First, a material layer is formed over a substrate. Thereafter, a plurality of directed self-assembly (DSA) patterns are formed on the material layer. Afterwards, a patterned photoresist layer is formed by using a single lithography process. The patterned photoresist layer covers a first portion of the DSA patterns and exposes a second portion of the DSA patterns. Further, the material layer is patterned by an etching process, using the patterned photoresist layer and the second portion of the DSA patterns as a mask.