The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Dec. 17, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Soulbrain Co., Ltd., Seongnam-si, KR;
Young Taek Hong, Hwaseong-si, KR;
Jinuk Lee, Daejeon, KR;
Junghun Lim, Daejeon, KR;
Jaewan Park, Daegu, KR;
Chanjin Jeong, Gongju-si, KR;
Hoon Han, Hwaseong-si, KR;
Seonghwan Park, Cheongju-si, KR;
Yanghwa Lee, Daejeon, KR;
Sang Won Bae, Hwaseong-si, KR;
Daehong Eom, Hwaseong-si, KR;
Byoungmoon Yoon, Hwaseong-si, KR;
Jihoon Jeong, Hwaseong-si, KR;
Kyunghyun Kim, Hwaseong-si, KR;
Kyounghwan Kim, Hwaseong-si, KR;
ChangSup Mun, Hwaseong-si, KR;
Se-Ho Cha, Hwaseong-si, KR;
Yongsun Ko, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., , KR;
Soulbrain Co., Ltd., , KR;
Abstract
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.