The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Oct. 28, 2011
Applicants:
Siddha Pimputkar, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Shin-ichiro Kawabata, Goleta, CA (US);
Inventors:
Siddha Pimputkar, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Shin-Ichiro Kawabata, Goleta, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/10 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 7/105 (2013.01); C30B 29/403 (2013.01); Y10T 428/24479 (2015.01);
Abstract
An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.