The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jul. 28, 2011
Susumu Noda, Kyoto, JP;
Takui Sakaguchi, Kyoto, JP;
Kazuya Nagase, Kawanishi, JP;
Wataru Kunishi, Kyoto, JP;
Eiji Miyai, Kyoto, JP;
Yoshikatsu Miura, Kyoto, JP;
Dai Ohnishi, Otsu, JP;
Susumu Noda, Kyoto, JP;
Takui Sakaguchi, Kyoto, JP;
Kazuya Nagase, Kawanishi, JP;
Wataru Kunishi, Kyoto, JP;
Eiji Miyai, Kyoto, JP;
Yoshikatsu Miura, Kyoto, JP;
Dai Ohnishi, Otsu, JP;
KYOTO UNIVERSITY, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layerhaving a base body made of AlGaAs (0<α<1) or (AlGa)InP (0<=β<1, 0<γ<1) with modified refractive index areas (air holes)periodically arranged therein and an epitaxial growth layercreated on the two-dimensional photonic crystal layerby an epitaxial method. Since AlGaAs and (AlGa)InP are solid even at high temperatures, the air holeswill not be deformed in the process of creating the epitaxial growth layer, so that the performance of the two-dimensional photonic crystal layeras a resonator can be maintained at high levels.