The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jun. 26, 2014
Chrong-jung Lin, Hsinchu, TW;
Chrong-Jung Lin, Hsinchu, TW;
Chrong-Jung Lin, Hsinchu, TW;
Abstract
A cell structure of a non-volatile memory includes a first metal layer, a first dielectric layer, a first transition layer, a second metal layer, a second dielectric layer, a second transition layer, and a third metal layer. The first dielectric layer is disposed over the first metal layer, and has a first via. The first transition layer is arranged between the first via and the first metal layer. The second metal layer is formed within the first via and contacted with the first transition layer. The second dielectric layer is disposed over the second metal layer and the first dielectric layer, and has a second via. The second transition layer is arranged between the second via and the second metal layer. The third metal layer is formed within the second via and contacted with the second transition layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile