The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
May. 16, 2013
Semileds Optoelectronics Co., Ltd., Chu-Nan, TW;
Chen-Fu Chu, Hsinchu, TW;
Hao-Chung Cheng, Pingtung County, TW;
Feng-Hsu Fan, New Taipei, TW;
Wen-Huang Liu, Hsinchu County, TW;
Chao-Chen Cheng, Hsinchu, TW;
David Trung Doan, Hsinchu County, TW;
Yang Po Wen, Miaoli County, TW;
SemiLEDS Optoelectronics Co., Ltd., Chu-nan, TW;
Abstract
A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.