The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Nov. 05, 2013
Applicants:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;

Inventors:

Yoshihiro Yoneda, Isehara, JP;

Takuya Fujii, Oiso, JP;

Tooru Uchida, Atsugi, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/10 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03042 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/109 (2013.01); H01L 31/1035 (2013.01);
Abstract

A semiconductor light receiving device includes a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region. The light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer. The semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer.


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