The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Nov. 21, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Keng-Jen Lin, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Chien-Liang Lin, Taoyuan County, TW;
Tsuo-Wen Lu, Kaohsiung, TW;
Wei-Jen Chen, Tainan, TW;
Chih-Chung Chen, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01);
Abstract
A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.