The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Apr. 21, 2015
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Shang-Hui Tu, Jhubei, TW;
Chih-Jen Huang, Dongshan Township, TW;
Jui-Chun Chang, Hsinchu, TW;
Yu-Hao Ho, Keelung, TW;
Wen-Hsin Lin, Jhubei, TW;
Shin-Cheng Lin, Tainan, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor device, including a semiconductor substrate, an epitaxial structure, a well region, a drain region and a source region respectively formed in the epitaxial structure inside and outside of the well region. At least one set of first, second and third heavily doped regions formed in the well region between source and drain regions, wherein the first, second and third heavily doped regions are adjoined sequentially from bottom to top. A gate structure disposed over the epitaxial structure. The present disclosure also provides a method for manufacturing the semiconductor device.