The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Nov. 26, 2013
Applicants:

Weng F. Yap, Phoenix, AZ (US);

Eduard J. Pabst, Mesa, AZ (US);

Inventors:

Weng F. Yap, Phoenix, AZ (US);

Eduard J. Pabst, Mesa, AZ (US);

Assignee:

FREESCALE SEMICONDUCTOR INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/66 (2006.01); H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/768 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/5389 (2013.01); H01L 23/49816 (2013.01);
Abstract

Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes producing a plurality of vertically-elongated contacts in ohmic contact with interconnect lines contained within one or more redistribution layers built over the frontside of a semiconductor die. A molded radiofrequency (RF) separation or stand-off layer is formed over the redistribution layers through which the plurality of vertically-elongated contacts extend. An antenna structure is fabricated or otherwise provided over the molded RF stand-off layer and electrically coupled to the semiconductor die through at least one of the plurality of vertically-elongated contacts.


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