The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9129913 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 08, 2015

Filed:

Oct. 18, 2011
Applicant:

Sang IN Lee, Sunnyvale, CA (US);

Inventor:

Sang In Lee, Sunnyvale, CA (US);

Assignee:

Veeco ALD Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); C23C 16/042 (2013.01); C23C 16/45551 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.


Find Patent Forward Citations

Lee, Sang. (2015). Formation of barrier layer on device using atomic layer deposition (U.S. Patent No. 9129913). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9129913

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