The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Jul. 27, 2012
Applicants:

Bi-o Kim, Seoul, KR;

Byong-ju Kim, Seoul, KR;

Jung-geun Jee, Seoul, KR;

Jin-gyun Kim, Yongin-si, KR;

Jae-young Ahn, Seongnam-si, KR;

Ki-hyun Hwang, Seongnam-si, KR;

Inventors:

Bi-O Kim, Seoul, KR;

Byong-Ju Kim, Seoul, KR;

Jung-Geun Jee, Seoul, KR;

Jin-Gyun Kim, Yongin-si, KR;

Jae-Young Ahn, Seongnam-si, KR;

Ki-Hyun Hwang, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to example embodiments, a semiconductor device includes horizontal patterns stacked on a substrate. The horizontal patterns define an opening through the horizontal patterns. A first core pattern is in the opening. A second core pattern is in the opening on the first core pattern. A first active pattern is between the first core pattern and the horizontal patterns. A second active pattern containing a first element is between the second core pattern and the horizontal patterns. The second active pattern contains the first element at a higher concentration than a concentration of the first element in the second core pattern.


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