The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Aug. 11, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Hsiang-Chen Lee, Kaohsiung, TW;
Shao-Nung Huang, Tainan, TW;
Wei-Pin Huang, Kaohsiung, TW;
Kuo-Lung Li, Yunlin County, TW;
Ling-Hsiu Chou, Tainan, TW;
Ping-Chia Shih, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a non-volatile memory semiconductor device is disclosed. The method includes the steps of providing a substrate; forming a gate pattern on the substrate, wherein the gate pattern comprises a first polysilicon layer on the substrate, an oxide-nitride-oxide (ONO) stack on the first polysilicon layer, and a second polysilicon layer on the ONO stack; forming an oxide layer on the top surface and sidewall of the gate pattern; performing a first etching process to remove part of the oxide layer; and performing a second etching process to completely remove the remaining oxide layer.