The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Feb. 19, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Difeng Zhu, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02178 (2013.01); H01L 21/0206 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01); H01L 21/02334 (2013.01); H01L 21/0334 (2013.01); H01L 21/28158 (2013.01); H01L 21/28194 (2013.01); H01L 21/32134 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.