The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Sep. 10, 2012
Applicants:
Katsuaki Isobe, Yokohama, JP;
Noboru Shibata, Kawasaki, JP;
Toshiki Hisada, Yokohama, JP;
Inventors:
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0483 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01);
Abstract
According to one embodiment, a first well of the first conductivity type which is formed in a substrate. a second well of a second conductivity type which is formed in the first well. The plurality of memory cells, the plurality of first bit line select transistors, and the plurality of second bit line select transistors are formed in the second well, and the plurality of first bit line select transistors and the plurality of second bit line select transistors are arranged on a side of the sense amplifier with respect to the plurality of memory cells of the plurality of bit lines.