The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 05, 2013
Headway Technologies, Inc., Milpitas, CA (US);
Kunliang Zhang, Fremont, CA (US);
Min Li, Fremont, CA (US);
Junjie Quan, Milpitas, CA (US);
Yewhee Chye, Hayward, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A wrap around shield structure is disclosed for biasing a free layer in a sensor and includes a bottom shield, side shields, and top shield in which each shield element comprises a high moment layer with a magnetization saturation greater than that of NiFe. The high moment layers provide a better micro read width performance. Side shield structure includes a stack of antiferromagnetically (AFM) coupled magnetic layers on a second high moment layer. A first (lower) magnetic layer in each side shield is ferromagnetically coupled to the second high moment layer, and to a first high moment layer in the bottom shield. A third (upper) magnetic layer in each side shield is ferromagnetically coupled to a third high moment layer in the top shield for improved stabilization. Sensor sidewalls may terminate at a top surface of a reference layer to decrease reader shield spacing.