The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jul. 09, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minjoon Park, Yongin-si, KR;
Junho Yoon, Suwon-si, KR;
Je-Woo Han, Hwaseong-si, KR;
Chan-Won Kim, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of fabricating a semiconductor device is provided. The method may include forming an interlayer insulating layer on a structure with a cell region and a peripheral circuit region, forming a first mask layer on the interlayer insulating layer, forming trenches in the first mask layer exposing the interlayer insulating layer by patterning the first mask layer on the peripheral circuit region, and forming key mask patterns in the trenches. An etch selectivity of the first mask patterns with respect to the interlayer insulating layer may be greater than that of the key mask patterns with respect to the interlayer insulating layer.