The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 15, 2013
Moonsub Shim, Savoy, IL (US);
Nuri OH, Champaign, IL (US);
You Zhai, Urbana, IL (US);
Sooji Nam, Urbana, IL (US);
Peter Trefonas, Medway, MA (US);
Kishori Deshpande, Lake Jackson, TX (US);
Jake Joo, Somerville, MA (US);
Moonsub Shim, Savoy, IL (US);
Nuri Oh, Champaign, IL (US);
You Zhai, Urbana, IL (US);
Sooji Nam, Urbana, IL (US);
Peter Trefonas, Medway, MA (US);
Kishori Deshpande, Lake Jackson, TX (US);
Jake Joo, Somerville, MA (US);
Rohm and Haas Electronic Materials, LLC, Marlborough, MA (US);
The University of Illinois, The Office of Technology Management, Urbana, IL (US);
Dow Global Technologies LLC, Midland, MI (US);
Abstract
Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.