The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Jun. 10, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Erh-Kun Lai, Longjing Shiang, TW;

Chia-Jung Chiu, Zhubei, TW;

Chieh Lo, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1052 (2013.01); H01L 27/11531 (2013.01); H01L 27/11548 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11556 (2013.01);
Abstract

A semiconductor device includes a substrate, a stack structure and a transistor. The substrate includes a first region and a second region. The stack structure is formed over the substrate in the first region. The transistor structure has a gate formed in the second region. A bottom portion of the gate structure is disposed at a height from the substrate that is less than a height between the substrate and a bottom portion of the stack structure.


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