The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Jun. 20, 2011
Applicants:

Sheng-hung Fan, Hsinchu, TW;

Chu-wei HU, Hsinchu County, TW;

Chien-chih Lin, Hsinchu, TW;

Chih-chung Chiu, Miaoli County, TW;

Zheng Zeng, Fremont, CA (US);

Wei-li Tsao, Hsinchu County, TW;

Inventors:

Sheng-Hung Fan, Hsinchu, TW;

Chu-Wei Hu, Hsinchu County, TW;

Chien-Chih Lin, Hsinchu, TW;

Chih-Chung Chiu, Miaoli County, TW;

Zheng Zeng, Fremont, CA (US);

Wei-Li Tsao, Hsinchu County, TW;

Assignee:

MEDIATEK INC., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0692 (2013.01); H01L 29/402 (2013.01); H01L 29/732 (2013.01); H01L 29/0649 (2013.01);
Abstract

In accordance with one embodiment, the present invention provides a bipolar junction transistor including an emitter region; a base region; a first isolation between the emitter region and the base region; a gate on the first isolation region and overlapping at least a portion of a periphery of the emitter region; a collector region; and a second isolation between the base region and the collector region.


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