The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jun. 10, 2013
Applicant:
Fei Company, Hillsboro, OR (US);
Inventors:
Aiden Martin, Camperdown, AU;
Milos Toth, Glebe, AU;
Assignee:
FEI COMPANY, HILLSBORO, OR (US);
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/305 (2006.01); C23F 4/02 (2006.01); H01L 21/3065 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3053 (2013.01); C23F 4/02 (2013.01); H01J 37/3002 (2013.01); H01L 21/3065 (2013.01); H01J 2237/0206 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/24445 (2013.01); H01J 2237/2608 (2013.01); H01J 2237/31732 (2013.01); H01J 2237/31749 (2013.01);
Abstract
Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NFis used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.