The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 15, 2013
Gek Soon Chua, Singapore, SG;
Yi Zou, Foster City, CA (US);
Wei-long Wang, Tainan, TW;
Byoung IL Choi, Gyeonggi-do, KR;
Gek Soon Chua, Singapore, SG;
Yi Zou, Foster City, CA (US);
Wei-Long Wang, Tainan, TW;
Byoung Il Choi, Gyeonggi-do, KR;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
An approach is provided for enabling simulation of photomask contour shapes, performing verification on the simulated photomask shapes, and correcting errors in OPC correction or bad fracturing methods to perform photomask proximity correction in real time before physically writing of the photomask. Embodiments include performing optical proximity correction of a photomask of a semiconductor layout to generate a corrected photomask, simulating the corrected photomask to generate one or more simulated contour shapes within a simulated photomask, verifying the simulated contour shapes to determine errors associated with the simulated photomask, and correcting the errors in the simulated contour shapes of the simulated photomask to generate a final photomask.