The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Oct. 05, 2012
Panasonic Corporation, Osaka, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
Takahiro Kawashima, Osaka, JP;
Genshiro Kawachi, Chiba, JP;
Tomohiko Oda, Osaka, JP;
Hikaru Nishitani, Nara, JP;
JOLED INC., Tokyo, JP;
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD., Hyogo, JP;
Abstract
A crystallinity evaluation method of evaluating crystallinity of a semiconductor film formed above a substrate includes following steps. First, a peak waveform of a Raman band in a Raman spectrum of the semiconductor film is obtained using Raman spectrometry. The Raman band corresponds to a phonon mode unique to the semiconductor film. The peak waveform is a wavelength range having a peak of the Raman band. Next, a first waveform is generated by fitting the obtained peak waveform by Gauss function. Then, a peak value of the first waveform is extracted. Then, a second waveform is generated by fitting the obtained peak waveform by Lorenz function based on the extracted peak value. Then, a peak value, a FWHM, and/or a wavelength indicating the peak value regarding the generated second waveform are obtained. Then, crystallinity of the semiconductor film is evaluated based on the obtained information.