The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Aug. 06, 2013
Globalfoundries Inc., Grand Cayman, KY;
Vimal K. Kamineni, Albany, NY (US);
Derya Deniz, Troy, NY (US);
Abner Bello, Clifton Park, NY (US);
Abhijeet Paul, Albany, NY (US);
Robert J. Miller, Yorktown Heights, NY (US);
William J. Taylor, Jr., Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One method disclosed herein includes forming a first stressed conductive layer within the trenches of a FinFET device and above the upper surface of a fin, forming a second stressed conductive layer above the first stressed conductive layer, removing a portion of the second stressed conductive layer and a portion of the first stressed conductive layer that is positioned above the fin while leaving portions of the first stressed conductive layer positioned within the trenches, and forming a conductive layer above the second stressed conductive layer, the upper surface of the fin and the portions of the first stressed conductive layer positioned within the trenches.