The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jul. 23, 2013
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Lei Zhu, Atsugi, JP;
Naoya Okamoto, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/045 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 29/2003 (2013.01);
Abstract
A compound semiconductor device includes: an electron transit layer formed of a compound semiconductor; and an electrode formed so as to overlie the electron transit layer with an insulating film interposed between the electron transit layer and the electrode, wherein part of the electron transit layer below the electrode are formed such that a first compound semiconductor having a first polar face and a second compound semiconductor having a second polar face are alternately arranged, and polarization charges in the first polar face have opposite polarity to polarization charges in the second polar face.