The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Aug. 12, 2014
Applicant:
Roy C. Nangoy, Santa Clara, CA (US);
Inventor:
Roy C. Nangoy, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/683 (2006.01); H01L 21/3065 (2006.01); H01L 21/78 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6833 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/78 (2013.01);
Abstract
Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. A bipolar electrostatic chuck is disposed below the plasma source. The bipolar electrostatic chuck is sized to support a substrate carrier having a tape and tape frame. The bipolar electrostatic chuck is configured to control a backside temperature of the substrate carrier prior to and during plasma processing.