The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jan. 31, 2014
Applicants:
Stmicroelectronics S.a., Montrouge, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Assignees:
STMicroelectronics SA, Montrouge, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/49 (2013.01); H01L 21/28008 (2013.01); H01L 21/28114 (2013.01); H01L 29/42376 (2013.01); H01L 29/4925 (2013.01); H01L 29/4991 (2013.01); H01L 29/6653 (2013.01);
Abstract
A MOS transistor including, above a gate insulator, a conductive gate stack having a height, a length, and a width, this stack having a lower portion close to the gate insulator and an upper portion, wherein the stack has a first length in its lower portion, and a second length shorter than the first length in its upper portion.