The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Feb. 14, 2008
Jeanne P. Spence Bickford, Essex Junction, VT (US);
Nazmul Habib, South Burlington, VT (US);
Robert Mcmahon, Essex Junction, VT (US);
Jeanne P. Spence Bickford, Essex Junction, VT (US);
Nazmul Habib, South Burlington, VT (US);
Robert McMahon, Essex Junction, VT (US);
INTERNATIONAL BUSINESS MACHINES COPORATION, Armonk, NY (US);
Abstract
A method for predicting and controlling leakage wherein an IDDQ prediction macro is placed in a plurality of design topographies and data is collected using the IDDQ prediction macro. The IDDQ prediction macro is configured to measure subthreshold leakage and gate leakage for at least one device type in a semiconductor test site and in scribe lines using the IDDQ prediction macro and establish a leakage model. The method correlates the semiconductor test site measurements and the scribe line measurements to establish scribe line control limits, predicts product leakage; and sets subthreshold leakage limits and gate leakage limits for each product using the leakage model.