The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Nov. 06, 2012
Applicants:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Yeon-Taek Jeong, Seoul, KR;
Bo-Sung Kim, Seoul, KR;
Doo-Hyoung Lee, Suwon-si, KR;
Doo-Na Kim, Seongnam-si, KR;
Eun-Hye Park, Incheon, KR;
Dong-Lim Kim, Seoul, KR;
Hyun-Jae Kim, Seoul, KR;
You-Seung Rim, Seoul, KR;
Hyun-Soo Lim, Goyang-si, KR;
Assignee:
Samsung Display Co., Ltd., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C09D 5/00 (2006.01); H01L 29/66 (2006.01); C04B 35/453 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/22 (2006.01); C04B 35/01 (2006.01); C04B 35/457 (2006.01); C04B 35/622 (2006.01);
U.S. Cl.
CPC ...
C09D 5/00 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/457 (2013.01); C04B 35/62222 (2013.01); H01L 27/1225 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/443 (2013.01); C04B 2235/444 (2013.01); C04B 2235/449 (2013.01);
Abstract
According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.