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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9115287 B1

PDFFull Text
Date of Patent:
Aug. 25, 2015

Filed:

Nov. 06, 2012

Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same

Applicants:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;

Inventors:

Yeon-Taek Jeong, Seoul, KR;

Bo-Sung Kim, Seoul, KR;

Doo-Hyoung Lee, Suwon-si, KR;

Doo-Na Kim, Seongnam-si, KR;

Eun-Hye Park, Incheon, KR;

Dong-Lim Kim, Seoul, KR;

Hyun-Jae Kim, Seoul, KR;

You-Seung Rim, Seoul, KR;

Hyun-Soo Lim, Goyang-si, KR;

Assignee:

Samsung Display Co., Ltd., , KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Su C Kim

Assistant Examiner:

Colleen E Snow

Int. Cl.
CPC ...
H01L 21/00 (2006.01); C09D 5/00 (2006.01); H01L 29/66 (2006.01); C04B 35/453 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/22 (2006.01); C04B 35/01 (2006.01); C04B 35/457 (2006.01); C04B 35/622 (2006.01);
U.S. Cl.
CPC ...
C09D 5/00 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/457 (2013.01); C04B 35/62222 (2013.01); H01L 27/1225 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/443 (2013.01); C04B 2235/444 (2013.01); C04B 2235/449 (2013.01);
Abstract

According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

Find Patent Forward Citations

Jeong, Yeon-Taek. (2015). Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same (U.S. Patent No. 9115287). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9115287

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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