The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Aug. 21, 2013
Applicants:
Applied Materials, Inc., Santa Clara, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Mark Hoinkis, Fishkill, NY (US);
Chun Yan, San Jose, CA (US);
Hiroyuki Miyazoe, White Plains, NY (US);
Eric Joseph, White Plains, NY (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 7/00 (2006.01); B08B 5/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
B08B 7/00 (2013.01); H01J 37/321 (2013.01); H01J 37/32862 (2013.01); B08B 5/00 (2013.01); B08B 7/0035 (2013.01); H01J 37/32009 (2013.01);
Abstract
Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this way, the copper residue is removed from the interior surfaces of the etch process chamber.