The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Mar. 08, 2012
Tzyh-cheang Lee, Hsinchu, TW;
Fu-liang Yang, Hsin-Chu, TW;
Tseung-yuen Tseng, Hsin-Chu, TW;
Chih-yang Lin, Hsin-Chu, TW;
Tzyh-Cheang Lee, Hsinchu, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Tseung-Yuen Tseng, Hsin-Chu, TW;
Chih-Yang Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a memory cell includes forming a bottom electrode on a substrate, a variable resistive material layer on the bottom electrode, and a top electrode on the variable resistive material layer. A first metal oxide layer interposes the top electrode and the variable resistive material layer. In an embodiment, the first metal oxide layer is a self-formed layer provided by the oxidation of a portion of the top electrode. In an embodiment, a second metal oxide layer is provided interposing the first metal oxide layer and the variable resistive material layer. The second metal oxide may be a self-formed layer formed by the reduction of the variable resistive material layer.