The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jun. 24, 2014
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Mikiko Takada, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Yukiko Abe, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Mikiko Takada, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Yukiko Abe, Kanagawa, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.