The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Mar. 02, 2012
Hisashi Yamada, Tsukuba, JP;
Masahiko Hata, Tsukuba, JP;
Masafumi Yokoyama, Bunkyo-ku, JP;
Mitsuru Takenaka, Bunkyo-ku, JP;
Shinichi Takagi, Bunkyo-ku, JP;
Tetsuji Yasuda, Tsukuba, JP;
Hideki Takagi, Tsukuba, JP;
Yuji Urabe, Tsukuba, JP;
Hisashi Yamada, Tsukuba, JP;
Masahiko Hata, Tsukuba, JP;
Masafumi Yokoyama, Bunkyo-ku, JP;
Mitsuru Takenaka, Bunkyo-ku, JP;
Shinichi Takagi, Bunkyo-ku, JP;
Tetsuji Yasuda, Tsukuba, JP;
Hideki Takagi, Tsukuba, JP;
Yuji Urabe, Tsukuba, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
THE UNIVERSITY OF TOKYO, Tokyo, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
Abstract
A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.