The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Dec. 18, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chih-Kuang Kao, Chu-pei, TW;
Huei-Wen Yang, Hsin-Chu, TW;
Yung-Sheng Huang, Hsin-Chu, TW;
Yu-Wen Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76864 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01);
Abstract
A copper interconnect includes a copper layer formed in a dielectric layer. A glue layer is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the glue layer and the dielectric layer. The barrier layer is a metal oxide.