The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Jul. 31, 2014
Applicants:

Kevin P. Ginter, Apache Junction, AZ (US);

Colby G. Rampley, Phoenix, AZ (US);

Jeffrey L. Weibrecht, Gilbert, AZ (US);

Inventors:

Kevin P. Ginter, Apache Junction, AZ (US);

Colby G. Rampley, Phoenix, AZ (US);

Jeffrey L. Weibrecht, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 21/30 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); B32B 43/00 (2006.01); B32B 38/10 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); B32B 38/10 (2013.01); B32B 43/006 (2013.01); H01L 21/304 (2013.01); H01L 21/30604 (2013.01); H01L 21/768 (2013.01); B32B 2457/14 (2013.01); H01L 21/02 (2013.01); H01L 21/2007 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68381 (2013.01);
Abstract

Various embodiments of semiconductor manufacturing methods include releasing a transparent carrier from a semiconductor wafer assembly that includes a semiconductor wafer in which a plurality of semiconductor devices are formed, an adhesive layer coupled to the semiconductor wafer, a carrier release layer coupled to the adhesive layer, and the transparent carrier coupled to the carrier release layer. The method further includes controlling a laser system to emit a first beam characterized by first laser parameters toward the adhesive layer, where the first laser parameters are selected so that the first beam will compromise a physical integrity of the adhesive layer. The method further includes, after controlling the laser system to emit the first beam toward the adhesive layer, removing the adhesive layer from the semiconductor wafer.


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