logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9111897 B1

PDFFull Text
Date of Patent:
Aug. 18, 2015

Filed:

Dec. 17, 2012

Methods of forming a polysilicon layer and methods of manufacturing semiconductor devices

Applicants:

Jung-geun Jee, Seoul, KR;

Jin-gyun Kim, Yongin-si, KR;

Ji-hoon Choi, Seongnam-si, KR;

Ki-hyun Hwang, Seongnam-si, KR;

Inventors:

Jung-Geun Jee, Seoul, KR;

Jin-Gyun Kim, Yongin-si, KR;

Ji-Hoon Choi, Seongnam-si, KR;

Ki-Hyun Hwang, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Jarrett Stark

Assistant Examiner:

Mohammad M Hoque

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/36 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/36 (2013.01); C23C 16/24 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02595 (2013.01); H01L 21/02639 (2013.01); H01L 21/28525 (2013.01); H01L 21/28556 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H01L 27/10888 (2013.01); H01L 27/11582 (2013.01); H01L 29/66666 (2013.01);
Abstract

A method of forming a polysilicon layer includes providing a silicon precursor onto an object loaded in a process chamber to form a seed layer. The silicon precursor includes a nitrogen containing silicon precursor and a chlorine containing silicon precursor. The method further includes providing a silicon source on the seed layer.

Find Patent Forward Citations

Jee, Jung-Geun. (2015). Methods of forming a polysilicon layer and methods of manufacturing semiconductor devices (U.S. Patent No. 9111897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9111897

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…