The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Mar. 15, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Jun Nishimura, Kuwana, JP;
Nobuaki Yasutake, Yokkaichi, JP;
Kei Sakamoto, Nagoya, JP;
Takayuki Okamura, Yokkaichi, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 27/2409 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1641 (2013.01); H01L 45/1675 (2013.01);
Abstract
A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element.